HB GaAs

              With the technology of proprietary intellectual property rights, the General Research Institute for Nonferrous Metals successfully builds up HB GaAs monocrystal production line with the largest capability in China. The quality of GaAs products has achieved the international advanced level, widely used in the field of infrared and high brightness  (red, orange, yellow) LED, semiconductorlaser device etc.

              Specifications and parameters

              Product
              GaAs monocrystal
              Dopant
              Si
              Zn
              Carrier concentration cm-3
              (2~50)×1017
              (2~50)×1018
              Mobility cm2/v.s
              1000~3500
              50~100
              EPD cm-2
              <5000, <1000
              <10000
              Diameter mm
              50.8±0.5, 62±0.5
              50.8±0.5, 62±0.5
               
              Length of primary, secondary plane of reference mm OF、IF(mm)
              16±1、7±1
              Thickness µm
              (210~400)±20
              Crystal orientation Orientation
              (100)±0.5°,(100)move(111)A(2°~15°)
              (100)±0.5°,(100)move(111)A(2°~15°)
              Wafer surface state
              Slice, grinding, corrosion, polishing
              As cut, L/L, E/E, P/E, P/P, (L-Lapping, E-Etching, P-Polishing)
              TTV µm
              <10
              Warp µm
              <10


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